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QUALCOMM PM660-002 PRIMARY SYSTEM POWER MANAGEMENT IC MASTER GUIDE
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1. PRODUCT IDENTIFICATION & HARDWARE SPECIFICATIONS:
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- Part Number: PM660-002 (Package silkscreen laser markings: "PM660" / "002")
- Silicon Manufacturer: Qualcomm Technologies, Inc.
- System Architecture: Dual-PMIC Architecture (Paired with Secondary PMIC: PM660L-004)
- Supported Chipset Platforms: Qualcomm Snapdragon 636 (SDM636), Snapdragon 660 (SDM660), SDM710
- IC Classification: Primary System Power Management IC (Master PMIC)
- Package Type: Fine-Pitch BGA (Ball Grid Array)
- Input Operating Voltage: VPH_PWR / VBAT (3.4V to 4.35V DC)
- Integrated Output Regulators:
* Multiple Synchronous Step-Down Buck Regulators:
- VREG_S1 / S2 (VDD_DIG): ~0.8V – 0.95V (Core digital processing logic)
- VREG_S3 (VDD_MEM): ~1.2V (LPDDR4 / LPDDR4X SDRAM memory)
- VREG_S4 / S5 (VDD_APC0): ~0.65V – 1.15V (Dynamic Silver power efficiency CPU cluster)
- VREG_S6 (VDD_APC1): ~0.75V – 1.25V (Dynamic Gold performance CPU cluster)
* 20+ Low-Dropout (LDO) Regulators:
- VREG_L1 / L2 / L3 (IO): 1.8V (Digital bus, sensor pull-ups, I2C / SPI rails)
- VREG_L14 / L19 (Storage): 2.95V – 3.0V (eMMC / UFS flash memory VCC)
- VREG_L24 / L25 (Analog): 2.8V / 2.85V (Camera sensors, biometrics, audio PLL)
- Reballing Stencil: Amaoe Universal Qualcomm PMIC / PM660 Stencil (0.12mm)
- Recommended Solder Paste: 183°C Leaded Solder Paste (Sn63/Pb37)
- Hot Air Rework Settings: 315°C – 330°C (Airflow: 40% – 50%)
2. CIRCUIT ARCHITECTURE & DUAL-PMIC FUNCTIONAL SPLIT:
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- Master PMIC Role (PM660-002): Dedicated exclusively to CPU core voltages (APC0/APC1), system RAM
power (VDD_MEM), system boot sequencing, 38.4MHz crystal oscillator (XO) clocking, and logic resets.
- Secondary PMIC Synergy (PM660L): Handles VBUS charging control, battery fuel gauge, LCD backlight,
flashlight LEDs, and display panel bias voltages.
- System Handshake (PS_HOLD): Detects PWR_KEY ground pulse, triggers internal state machine, awakens
the 38.4MHz crystal oscillator, and awaits PS_HOLD (1.8V) from the application processor.
- Compatible Smartphone Models:
* Xiaomi / Redmi: Redmi Note 5 / Note 5 Pro, Redmi Note 7, Mi A2 (Mi 6X), Mi Max 3, Mi Note 3
* Vivo: Vivo X20, Vivo X20 Plus, Vivo X21, Vivo V11 Pro
* Oppo: Oppo R11, Oppo R11s, Oppo R15 (Qualcomm variant)
* Motorola: Moto G6 Plus, Moto Z3 Play
* Nokia: Nokia 7 Plus, Nokia 6.1 (2018).
3. COMMON MOTHERBOARD FAULT SYMPTOMS:
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- Completely Dead Phone (0.00A on DC Power Supply): Device does not trigger when pressing the power
button (often caused by cracked solder balls under PM660-002 or missing 1.8V PWR_KEY voltage).
- Hanging / Sticking Current (0.04A – 0.08A Draw): When pressing the power key, current jumps to
around 40mA–80mA and hangs permanently without fluctuating (indicates missing VREG buck rail,
defective 38.4MHz crystal, or broken PS_HOLD line).
- Automatic Qualcomm HS-USB QDLoader 9008 Port: Phone connects directly to PC in 9008 mode with a
blank screen due to missing UFS/eMMC or LPDDR4 memory voltages (VREG_S3 / VREG_L14).
- Boot Loop at Brand Logo: VDD_APC core voltage drops under heavy CPU multi-core clock scaling due
to cracked solder balls under PM660-002 or a degraded buck inductor.
- Primary VPH_PWR Short Circuit: Damaged high-side buck MOSFET inside PM660-002 creates a 0Ω dead
short across the main battery line.
4. STEP-BY-STEP DIAGNOSTIC & TESTING PROCEDURES:
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A. Cold Testing (Multimeter Diode Mode):
1. Disconnect battery and USB cable completely.
2. Set digital multimeter to Diode Mode.
3. Place RED probe on motherboard ground shield (GND). Probe all main buck coils around PM660-002:
- VREG_S1 / S2 (Digital Core): Normal reading is 180mV – 320mV.
- VREG_S3 (LPDDR4 RAM): Normal reading is 280mV – 420mV.
- VREG_S4 / S5 (CPU Cluster): Normal reading is 80mV – 180mV (naturally low core resistance).
4. Diagnostic Rule: If any coil reads 000mV (dead short), isolate whether the short originates
from the processor or from PM660-002 by injecting 1.0V with a DC power supply.
B. Hot Testing (Live Operating Voltage Check):
1. Connect DC power supply at 4.0V to the battery connector.
2. Verify that 4.0V VPH_PWR is present across all input bypass capacitors of PM660-002.
3. Check Power Key pin: Must read steady 1.8V DC.
4. Press Power Key and measure voltage on all surrounding buck coils:
- Buck rails (0.8V, 1.2V, 0.9V) must fire immediately in strict sequence.
5. Check PS_HOLD test point: Must rise from 0V to 1.8V. If PS_HOLD drops back to 0V after 1–2
seconds, inspect the CPU/RAM combo and UFS storage chip.
5. REWORK, REBALLING & INSTALLATION GUIDELINES:
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- Thermal Masking & Precaution:
* Mask the CPU/RAM combo, UFS flash, and PM660L using high-temperature polyimide tape.
- Chip Desoldering (Removal):
* Apply a small amount of premium low-solid tacky BGA flux around the IC perimeter.
* Set hot air rework station to 320°C with 45% airflow.
* Direct heat in smooth, circular motions. Lift the IC vertically with fine tweezers as soon as
all solder balls melt to avoid tearing delicate PCB pads.
- PCB Pad Preparation:
* Clean pads flat using a soldering iron (300°C) with copper solder wick.
* Wash with 99% Isopropyl Alcohol (IPA) and inspect under microscope for broken or bridged pads.
- Reballing & Installation:
* Reball replacement IC using a 0.12mm dedicated Qualcomm PM660 stencil and 183°C leaded solder paste.
* Apply a microscope-thin film of flux to motherboard pads.
* Position PM660-002 carefully, matching Pin 1 index dot with the silkscreen indicator.
* Heat gently at 310°C until the solder balls melt and surface tension pulls PM660-002 into exact
self-alignment. Allow the board to cool naturally before testing.
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