PM8926 IC
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QUALCOMM PM8926 / PM8926-0VV SNAPDRAGON 400 PRIMARY PMIC REPAIR GUIDE
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1. PRODUCT IDENTIFICATION & SILICON SPECIFICATIONS:
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- Silicon Laser Marking: PM8926 (Common Production Variant: PM8926-0VV / PM8926 0VV)
- Silicon Manufacturer: Qualcomm Technologies, Inc.
- Semiconductor Process Node: 28nm LP (Low Power) CMOS Process
- System Classification: Primary Master Core PMIC (Power Management, Charger & Audio Codec)
- Associated SoC Platforms: Qualcomm Snapdragon 400 (MSM8926 Quad-Core LTE, APQ8026)
- Architecture Type: Single-Chip High-Integration Power Management Hub
- Package Form Factor: Fine-Pitch Wafer-Level Chip-Scale BGA (WLCSP)
- Regulated Output Domains:
* Synchronous Step-Down Buck Converters:
- VDD_APC (Quad-Core Cortex-A7 Application Cluster up to 1.6GHz): 0.90V – 1.25V Dynamic Voltage Scaling.
- VDD_MSS (LTE Baseband Modem & DSP Digital Core): 1.05V – 1.15V.
- VDD_MEM / VDD_DDR (LPDDR2 / LPDDR3 Memory Rails): Clean 1.20V / 1.80V.
* 20+ Low-Dropout (LDO) Regulators:
- VREG_L6_1P8 (1.8V System IO, Peripheral Sensors, and eMMC VCCQ).
- VREG_L11_2P95 (2.95V eMMC Flash Storage Core VCC).
- VREG_L17_2P85 (2.85V Display Controller, Touch Digitizer, and Camera Analog).
- Ultra-low-noise dedicated rails for WTR1625L / WFR1620 RF Transceivers, GPS, and Wi-Fi/BT.
* Integrated Charging & Analog Subsystems:
- Switch-mode 1.5A–2.0A USB Battery Charger with dynamic VPH_PWR / VSYS power-path management.
- 19.2MHz system reference clock oscillator driver circuit.
- Hardware Power-Key debounce circuitry, cold-boot reset generator (PON_RESET_N), and PS_HOLD monitor.
- Built-in Audio Codec with high-fidelity stereo headphone DAC and speaker amplifier.
2. COMPATIBLE SMARTPHONES & DEVICES:
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- Sony Xperia:
* Xperia T2 Ultra / T2 Ultra Dual (D5303, D5306, D5316, D5322)
* Xperia C3 / C3 Dual (D2533, D2502, S55T, S55U)
* Xperia M2 / M2 Dual / M2 Aqua (D2303, D2305, D2306, D2403, D2406)
* Xperia T3 (D5102, D5103, D5106)
- HTC:
* HTC Desire 816 / 816G (A5-UL, A5-DUG, D816w, D816t)
* HTC Desire 610 (A3-UL)
* HTC Desire 626 / 630N (A16-DWGL, A11-CHL)
* HTC One mini 2 (M8 mini)
- Samsung:
* Galaxy Grand 2 LTE (SM-G7105, SM-G7102 Snapdragon edition)
* Galaxy Mega 2 (SM-G750A, SM-G7508)
* Galaxy S4 mini LTE (GT-I9195)
- Others:
* Moto G 1st Gen 4G LTE (XT1039, XT1040, XT1045)
* Xiaomi Redmi 1S 4G LTE (2014501), Coolpad 8720L / 8730L
3. TYPICAL BOARD-LEVEL FAULT SYMPTOMS:
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- Completely Dead Handset (0.000A DC Current on Power Key Trigger):
* Bench power supply shows no current draw upon pressing power switch.
* Cause: Internal power key pull-up failure (KYPD_PWR_N), defective 19.2MHz reference clock, or blown
VREG_L6_1P8 supply line.
- Low Current Boot Freeze / Hang on Logo (0.04A – 0.07A):
* Power supply draws ~50mA and hangs frozen, or phone vibrates once and gets stuck on Sony/HTC splash screen.
* Cause: Missing Cortex-A7 core buck voltage (VDD_APC) or unstable eMMC storage power (2.95V VCC).
- Automatic Qualcomm HS-USB QDLoader 9008 Port Detection:
* Handset stays completely dark and enumerates strictly as a 9008 COM port on PC due to missing or
corrupted storage power rails.
- Charging Failure / 0.00A Ammeter Draw / Fake Charging:
* Phone plugged into charger draws zero current, or shows battery charging icon without actual battery
percentage gain due to burned internal switching FETs.
- Total Audio Codec Failure (Mic & Loudspeaker Dead):
* Phone operates normally, but has no ringtone, mic input, or earpiece output following liquid contact.
4. STEP-BY-STEP MULTIMETER TESTING & DIAGNOSTICS:
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A. Cold Testing (Diode Mode Check - Board Powered Off, Battery Disconnected):
1. Set multimeter to Diode Mode. Connect RED probe to motherboard Ground shield (GND):
- Main VSYS / VBAT Positive Line: Normal ~390mV – 490mV.
- VDD_APC (CPU Core Inductor): Normal ~75mV – 130mV (low impedance, must NOT be 0.000V).
- VDD_MSS (Modem Buck Coil): Normal ~110mV – 175mV.
- VREG_L6_1P8 (1.8V System IO Rail): Normal ~360mV – 460mV.
- eMMC VCC 2.95V Output Capacitor: Normal ~410mV – 530mV.
- Power Key Contact Pin: Normal ~510mV – 640mV.
2. Short-Circuit Isolation:
- If VBAT / VSYS reads 0.000V (beeping dead short to ground), inject 3.7V DC (current limit 1.5A).
Observe PM8926 and surrounding MLCC bypass capacitors with thermal camera or rosin vapor.
B. Live Operating Voltage Check (Hot Testing):
1. Connect DC power supply at 3.8V to battery terminals:
- Check Power Key contact: Must measure steady 1.8V DC.
2. Press and hold Power Button while probing output coils:
- VDD_APC core coil must measure 1.05V – 1.15V DC.
- VDD_MSS modem coil must measure steady 1.10V DC.
- Verify 1.8V and 2.95V at eMMC bypass capacitors.
- Check PS_HOLD test point: Must rise from 0V to 1.8V and stay locked high. If PS_HOLD drops back
to 0V within 1–2 seconds, CPU/eMMC communication has failed.
5. SOLDERING, REBALLING & REWORK SPECIFICATIONS:
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- IC Removal:
* Dispense high-grade, non-corrosive RMA tacky BGA flux around the perimeter of PM8926.
* Hot air rework station settings: 310°C – 320°C with 40% airflow (standard circular nozzle).
* Apply heat uniformly in circles. Once solder balls fully liquefy, lift the IC vertically using fine tweezers.
- Pad Preparation & Cleaning:
* Apply leaded solder (Sn63/Pb37) to motherboard footprint pads to lower the melting threshold.
* Level pads perfectly flat using copper desoldering braid and a soldering iron tip set to 290°C – 300°C.
* Clean residual flux thoroughly with 99% Isopropyl Alcohol (IPA); inspect pads under microscope.
- Reballing Procedure:
* Use a 0.12mm dedicated Amaoe PM1 or universal Qualcomm PMIC stencil.
* Squeegee 183°C leaded solder paste uniformly into all stencil apertures.
* Reflow gently with hot air at 280°C – 290°C with low airflow (20%) until uniform solder spheres form.
- Alignment & Installation:
* Spread a microscopic, transparent film of BGA flux over PCB pads.
* Align Pin 1 orientation dot precisely with the PCB silkscreen corner indicator.
* Reflow at 305°C – 315°C with 35% airflow until chip self-centers on solder surface tension.
* Allow motherboard to cool naturally to room temperature for 5 minutes before connecting DC power.
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